Synopsys eMRAM IP

Synopsys eMRAM IP is a complete non-volatile memory IP solution that helps designers achieve higher memory capacity with a smaller area footprint and lower power. Synopsys delivers a configurable, fully integrated memory compiler allowing designers to choose the most optimal instance per their needs. Synopsys solution includes an eMRAM compiler, error correction code (ECC), and memory BIST, thus accelerating the design cycle and allowing faster time to market.

To enhance reliability and endurance, Synopsys eMRAM provides differentiated features like read-modify-write, write-verify-write, and programmable reference voltage generation. We designed it for automotive applications supporting 150ºC junction temperature.

Synopsys eMRAM IP provides versatile configurations supporting a broad range of application requirements. Automotive, MCU, IoT, space, and AI SoCs can all benefit from eMRAM's low power characteristics, high capacity, radiation immunity, and smaller form factor.

In addition, Synopsys provides a variety of solutions to help accelerate the integration of the high-quality eMRAM, including Synopsys Self-Test and Repair (STAR) Memory System™, Synopsys STAR ECC Compiler IP, and Synopsys Silicon Lifecycle Management Family.

eMRAM
Figure 1: Configurable eMRAM IP provides flexibility for multiple word widths, aspect ratios, and floorplan optimizations

Synopsys eMRAM IP Datasheet
Synopsys Foundation IP for TSMC 22ULL Datasheet

 

Highlights
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• Smaller area and lower power compared to other high-capacity persistent memory options

• Complete, configurable IP solution includes embedded voltage circuitry, built-in self-test (BIST) and repair, and error correction code (ECC) for faster SoC integration

• Standard embedded memory interface simplifies system architecture

• Up to 100K write cycle endurance  

• Data securely stored and resistant to reverse engineering

• Utilizes radiation-tolerant MRAM bits for high-reliability applications

• Wide operating temperature range: -40°C to 150°C  

• Over 45% area reduction compared to standard ultra-high-density SRAMs

Single Port High Density eMRAM 128M Sync Compiler For TSMC 16nm FFCSTARs Subscribe
Single Port High Density eMRAM 128M Sync Compiler, TSMC 22nm ULL High-K Metal Gate P-Optional Vt/Cell Std Vt ProcessSTARs Subscribe
Description: Single Port High Density eMRAM 128M Sync Compiler For TSMC 16nm FFC
Name: dwc_comp_ts16n0c41p11saemr128s
Version: a01
ECCN: 3E991/NLR
STARs: Open and/or Closed STARs
myDesignWare: Subscribe for Notifications
Product Type: DesignWare Embedded Memory IP
Documentation:
Download: v-comp_ts16n0c41p11saemr128s
Description: Single Port High Density eMRAM 128M Sync Compiler, TSMC 22nm ULL High-K Metal Gate P-Optional Vt/Cell Std Vt Process
Name: dwc_comp_ts22nlh41p11saemr128s
Version: a02
ECCN: 3E991/NLR
STARs: Open and/or Closed STARs
myDesignWare: Subscribe for Notifications
Product Type: DesignWare Embedded Memory IP
Documentation:
Download: v-comp_ts22nlh41p11saemr128s
Product Code: I286-0